MINATECH
The proposal of this project is motivated by the need for a new material basis for pressure and strain sensors that operate in extreme conditions, especially high temperature and high electric field. The proposed solution takes advantage of excellent physical properties of III-N compounds, especially gallium nitride (GaN) based heterostructures. These materials can satisfy extreme requirements demanded for certain sensors applications and can provide solutions applicable in extreme environments.
The project is directed to design and implementation of MEMS pressure and strain sensor, which fulfill all above mentioned criteria for operation in harsh conditions of temperature range T = 300 – 800°C, high electric field and highly corrosive environments. Moreover, designed concept of piezoelectrical MEMS pressure and strain sensors integrates two different physical mechanisms of sensing and detection: HEMT (High Electron Mobility Transistor) and SAW (Surface Acoustic Wave) based sensing principles.
Originallity of the design concept of MEMS sensors is supported new method of bulk micromachining for defaults substrates SiC and Al2O3. It allows define 3D micromechanical membranes and cantilevers sensor devices. Proposed method is based on laser ablation technique in combination with Selective Reactive Ion Etching (SRIE) technique.
Förderprogramm
Zentrum für Internationale Kooperation & Mobilität (ICM)
Projektpartner
Akademie der Wissenschaft, Bratislava, Slowakei
Weitere Informationen
http://www.oead.at/ueber_uns/organisation/zentrum_fuer_internationale_kooperation_mobilitaet_icm/
